Qualcomm Snapdragon 8 Gen 4, used in Galaxy S25, to be unveiled in October

The chipset of the upcoming Samsung Galaxy S25, Snapdragon 8 Gen 4, is set to launch in October 2024. Qualcomm has announced its official plan to unveil its next-generation flagship processor Snapdragon 8  Gen 4.

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Samsung Galaxy S25’s chipset is expected to be launched in October 2024 

Qualcomm usually launches its latest processor at its Snapdragon Summit event. This time the event will be held in October this year. It will be a three-day affair between October 21 to 23 in Maui, Hawaii. Finally, Qualcomm came to the words to launch the next generation of its flagship-grade smartphone processor dubbed Snapdragon 8 Gen 4 at the Snapdragon Summit event. 

Following Samsung’s track record, the forthcoming Galaxy S25 series will be powered by the Snapdragon 8 Gen 4 chipset in a few specific markets, including the USA. Qualcomm has already revealed that the upcoming Snapdragon 8 gen 4 will feature its new custom Oryon CPU cores. 

These cores are already debuted with the Snapdragon X Elite. Qualcomm’s flagship ARM chip is made to power PCs and laptops that run Windows. For instance, Galaxy Book 4 Edge is powered by this chip and was unveiled a couple of weeks ago. The Korean giant uses Qualcomm’s Snapdragon chipset to power its high-end Galaxy S series devices in China and the US.  

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However, the same phones use in-house Exynos chipsets in every respect and powered all the phones globally with the Snapdragon 8 Gen 2 for Galaxy chipset. 

Samsung Galaxy S25 launch date 

Samsung usually launches its latest high-end S series devices in the early first quarter of the year. Following the previous schedule, it’s expected that the Samsung Galaxy S25 will be debuted sometime between late January and February 2025. 

Galaxy S25 could also bring more advanced generative AI tools under the Galaxy AI title. Being a next-gen flagship device it is expected to bring decent design, upgraded features, high-end specs, and many more. 

Snapdragon 8 Gen 4 launch

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